Gd. Soraru et al., STRUCTURAL CHARACTERIZATION AND HIGH-TEMPERATURE BEHAVIOR OF SILICON OXYCARBIDE CLASSES PREPARED FROM SOL-GEL PRECURSORS CONTAINING SI-H BONDS, Journal of the American Ceramic Society, 78(2), 1995, pp. 379-387
Silicon oxycarbide glasses have been synthesized by inert atmosphere p
yrolysis at 1000 degrees C of gel precursors obtained by cohydrolysis
of triethosysilane, HSi(OEt)(3), and methyldiethoysilane, HMeSi(OEt)(2
). The oxycarbide structures have been carefully characterized by mean
s of different techniques such as Si-29 magic angle spinning nuclear m
agnetic resonance (MAS-NMR) and Raman spectroscopies, X-ray diffractio
n (XRD), and chemical analysis. Experimental results clearly indicate
that, depending on the composition of the starting gels, the resulting
oxycarbide glass either is formed by a pure oxycarbide phase or conta
ins an extra carbon or silicon phase. By increasing the temperature up
to 1500 degrees C, the oxycarbide glasses display compositional and w
eight stability; however, the amorphous network undergoes structural r
earrangements that lead to the precipitation of nano-sized beta-SiC cr
ystallites into amorphous silica. Crystallization of metallic silicon
is also clearly observed at 1500 degrees C for the samples in which th
e presence of Si-Si bonds was postulated at 1000 degrees C.