ETCHING HIGH-ASPECT-RATIO (110) SILICON GROOVES IN CSOH

Authors
YAO SM HESKETH PJ MACRANDER AT
Citation
Sm. Yao et al., ETCHING HIGH-ASPECT-RATIO (110) SILICON GROOVES IN CSOH, Journal of the Electrochemical Society, 142(2), 1995, pp. 23-25
Citations number
6
Categorie Soggetti
Electrochemistry
Journal title
Journal of the Electrochemical Society → ACNP
ISSN journal
00134651
Volume
142
Issue
2
Year of publication
1995
Pages
23 - 25
Database
ISI
SICI code
0013-4651(1995)142:2<23:EH(SGI>2.0.ZU;2-F
Abstract
The cross-sectional geometry produced by anisotropic etching high aspe ct ratio (height/width = 115) silicon grooves with CsOH was studied as a function of the solution concentration. At 50 weight percent (w/o) CsOH straight sidewalls are produced, but at 15 and 25 w/o re-entrant tapered profiles are produced. The etch rates are increased in the gro ove by 25-100% indicating diffusion effects. The etch rate of the surf ace was in agreement with previous studies of CsOH etching, but unable to predict the dimensional changes in the grooves.