KINETICS OF SALICIDE CONTACT FORMATION FOR THIN-FILM SOI TRANSISTORS

Authors
MENDICINO MA SEEBAUER EG
Citation
Ma. Mendicino et Eg. Seebauer, KINETICS OF SALICIDE CONTACT FORMATION FOR THIN-FILM SOI TRANSISTORS, Journal of the Electrochemical Society, 142(2), 1995, pp. 28-30
Citations number
20
Categorie Soggetti
Electrochemistry
Journal title
Journal of the Electrochemical Society → ACNP
ISSN journal
00134651
Volume
142
Issue
2
Year of publication
1995
Pages
28 - 30
Database
ISI
SICI code
0013-4651(1995)142:2<28:KOSCFF>2.0.ZU;2-C
Abstract
Problems of voiding and poor contact resistance have plagued recent at tempts to apply salicide technology to silicon-on-insulator (SOI) tran sistors. A physical picture is developed to explain why these problems occur. The picture rests on the known kinetics of silicide formation and the resistance to silicon diffusion imposed by device geometry.