Mj. Bozack et al., PHYSICAL CHARACTERIZATION OF PB1ZR0.2TI0.8O3 PREPARED BY THE SOL-GEL PROCESS, Journal of the Electrochemical Society, 142(2), 1995, pp. 485-491
We have used Auger electron spectroscopy (AES), x-ray photoelectron sp
ectroscopy (XPS), Raman spectroscopy, and Rutherford backscattering sp
ectroscopy (RBS) to characterize lead zirconate-lead titanate (PbZrO3-
PbTiO3) of stoichiometry Pb1Zr0.2Ti0.8O3 prepared by the sol-gel proce
ss. The films were deposited on a sputtered film of Pt and annealed at
700 degrees C 30 mm. Dramatic AES and XPS chemical effects are observ
ed in the film due to charge transfer between Ti and Zr and O; the bin
ding energy of the PZT XPS Ti2p(3/2) (Zr3d(5/2)) orbital shifts +5.2 e
V (+4.3 eV) compared to the element and substantial shape changes are
observed in the AES Ti(LMM) and O(KLL) peaks. Raman spectroscopy at bo
th 300 and 80 K show that mode frequencies shift upward with decreasin
g temperature in accord with soft mode theory. Rutherford backscatteri
ng spectroscopy (RBS) indicates that the stoichiometry of Pb1Zr0.2Ti0.
8O3, on Pt changes little during 700 degrees C thermal annealing in ox
ygen because the oxygen from the gas phase replaces the oxygen lost to
the substrate by thermal diffusion.