ANNEALING OF REACTIVE ION ETCHING PLASMA-EXPOSED THIN OXIDES

High temperature anneals have been used in an attempt to remove reacti ve ion etching plasma exposure induced damage in thin oxides and at Si O2-Si interfaces and to restore the charge to breakdown reliability of these thin oxides. A 900 degrees C anneal in forming gas for 1 h was found to be able to remove most of the etch-induced oxide charge and S iO2-Si interface states; however, it was not able to fully restore the charge to breakdown value of the plasma-damaged oxide back to that of an unexposed control oxide. The effects of annealing ambient on oxide charge to breakdown have also been examined.