R. Deike et K. Schwerdtfeger, REACTIONS BETWEEN LIQUID SILICON AND DIFFERENT REFRACTORY MATERIALS, Journal of the Electrochemical Society, 142(2), 1995, pp. 609-614
The growth morphology and growth rate of silicon carbide at the interf
ace between crucibles made, of graphite or of glassy carbon, and liqui
d silicon have been studied. The growth occurs slowly reaching a layer
of similar to 26 mu m on graphite and of similar to 8 mu m on glassy
carbon after 48 h at 1500 degrees C. Silicon nitride performed well as
crucible material only during short times up to 20 min. Later the mel
t penetrated into the ceramic body leading to a disintegration of the
crucible.