Infrared and excimer laser-powered decompositions of silacyclobutanes
R(2)SiCH(2)CH(2)CH(2) (R=H, CH3, CH2=CH and HC=C), 4-silaspiro[3,4]oct
ane and 4-silaspiro[3,3]heptane in the gas phase are shown to be domin
ated by elimination of ethene to yield transient silenes which efficie
ntly polymerize into solid polycarbosilane deposits, potential precurs
ors to silicon carbide. IR laser powered decomposition of tetramethylc
yclotetrasiloxane affords transient hydroxy(methyl)silylene. The organ
osilicon transients were identified by chemical trapping experiments.
Copyright (C) 1997 Elsevier Science Ltd.