LASER-GENERATED SILENES AND THEIR GAS-PHASE POLYMERIZATION

Authors
Citation
J. Pola, LASER-GENERATED SILENES AND THEIR GAS-PHASE POLYMERIZATION, Radiation physics and chemistry, 49(1), 1997, pp. 151-154
Citations number
9
Categorie Soggetti
Nuclear Sciences & Tecnology","Chemistry Physical","Physics, Atomic, Molecular & Chemical
ISSN journal
0969806X
Volume
49
Issue
1
Year of publication
1997
Pages
151 - 154
Database
ISI
SICI code
0969-806X(1997)49:1<151:LSATGP>2.0.ZU;2-L
Abstract
Infrared and excimer laser-powered decompositions of silacyclobutanes R(2)SiCH(2)CH(2)CH(2) (R=H, CH3, CH2=CH and HC=C), 4-silaspiro[3,4]oct ane and 4-silaspiro[3,3]heptane in the gas phase are shown to be domin ated by elimination of ethene to yield transient silenes which efficie ntly polymerize into solid polycarbosilane deposits, potential precurs ors to silicon carbide. IR laser powered decomposition of tetramethylc yclotetrasiloxane affords transient hydroxy(methyl)silylene. The organ osilicon transients were identified by chemical trapping experiments. Copyright (C) 1997 Elsevier Science Ltd.