OXYGEN LOSS DURING THERMAL DONOR FORMATION IN CZOCHRALSKI SILICON - NEW INSIGHTS INTO OXYGEN DIFFUSION MECHANISMS

Authors
MCQUAID SA BINNS MJ LONDOS CA TUCKER JH BROWN AR NEWMAN RC
Citation
Sa. Mcquaid et al., OXYGEN LOSS DURING THERMAL DONOR FORMATION IN CZOCHRALSKI SILICON - NEW INSIGHTS INTO OXYGEN DIFFUSION MECHANISMS, Journal of applied physics, 77(4), 1995, pp. 1427-1442
Citations number
90
Categorie Soggetti
Physics, Applied
Journal title
Journal of applied physics → ACNP
ISSN journal
00218979
Volume
77
Issue
4
Year of publication
1995
Pages
1427 - 1442
Database
ISI
SICI code
0021-8979(1995)77:4<1427:OLDTDF>2.0.ZU;2-8