ELECTRICAL AND STRUCTURAL-PROPERTIES OF BE-DOPED AND SI-DOPED LOW-TEMPERATURE-GROWN GAAS

Authors
ATIQUE N HARMON ES CHANG JCP WOODALL JM MELLOCH MR OTSUKA N
Citation
N. Atique et al., ELECTRICAL AND STRUCTURAL-PROPERTIES OF BE-DOPED AND SI-DOPED LOW-TEMPERATURE-GROWN GAAS, Journal of applied physics, 77(4), 1995, pp. 1471-1476
Citations number
28
Categorie Soggetti
Physics, Applied
Journal title
Journal of applied physics → ACNP
ISSN journal
00218979
Volume
77
Issue
4
Year of publication
1995
Pages
1471 - 1476
Database
ISI
SICI code
0021-8979(1995)77:4<1471:EASOBA>2.0.ZU;2-M