GE(001) GAS-SOURCE MOLECULAR-BEAM EPITAXY ON GE(001)2X1 AND SI(001)2X1 FROM GE2H6 - GROWTH-KINETICS AND SURFACE ROUGHENING

Authors
BRAMBLETT TR LU Q LEE NE TAYLOR N HASAN MA GREENE JE
Citation
Tr. Bramblett et al., GE(001) GAS-SOURCE MOLECULAR-BEAM EPITAXY ON GE(001)2X1 AND SI(001)2X1 FROM GE2H6 - GROWTH-KINETICS AND SURFACE ROUGHENING, Journal of applied physics, 77(4), 1995, pp. 1504-1513
Citations number
74
Categorie Soggetti
Physics, Applied
Journal title
Journal of applied physics → ACNP
ISSN journal
00218979
Volume
77
Issue
4
Year of publication
1995
Pages
1504 - 1513
Database
ISI
SICI code
0021-8979(1995)77:4<1504:GGMEOG>2.0.ZU;2-O