SI SIO2, INTERFACE STATES AND NEUTRAL OXIDE TRAPS INDUCED BY SURFACE MICROROUGHNESS/

Authors
KIMURA M MITSUHASHI J KOYAMA H
Citation
M. Kimura et al., SI SIO2, INTERFACE STATES AND NEUTRAL OXIDE TRAPS INDUCED BY SURFACE MICROROUGHNESS/, Journal of applied physics, 77(4), 1995, pp. 1569-1575
Citations number
30
Categorie Soggetti
Physics, Applied
Journal title
Journal of applied physics → ACNP
ISSN journal
00218979
Volume
77
Issue
4
Year of publication
1995
Pages
1569 - 1575
Database
ISI
SICI code
0021-8979(1995)77:4<1569:SSISAN>2.0.ZU;2-J