CAPACITANCE-VOLTAGE MEASUREMENT OF CHARGED DEFECT CONCENTRATION PROFILE NEAR SEMICONDUCTOR DEPLETION ZONES

Authors
FREDERICKSON AR KARAKASHIAN AS
Citation
Ar. Frederickson et As. Karakashian, CAPACITANCE-VOLTAGE MEASUREMENT OF CHARGED DEFECT CONCENTRATION PROFILE NEAR SEMICONDUCTOR DEPLETION ZONES, Journal of applied physics, 77(4), 1995, pp. 1627-1634
Citations number
19
Categorie Soggetti
Physics, Applied
Journal title
Journal of applied physics → ACNP
ISSN journal
00218979
Volume
77
Issue
4
Year of publication
1995
Pages
1627 - 1634
Database
ISI
SICI code
0021-8979(1995)77:4<1627:CMOCDC>2.0.ZU;2-R