PHOTOLUMINESCENCE EXCITATION ANALYSIS OF ER-DOPED GAAS GROWN BY METALORGANIC VAPOR-PHASE DEPOSITION

Authors
TAKAHEI K TAGUCHI A
Citation
K. Takahei et A. Taguchi, PHOTOLUMINESCENCE EXCITATION ANALYSIS OF ER-DOPED GAAS GROWN BY METALORGANIC VAPOR-PHASE DEPOSITION, Journal of applied physics, 77(4), 1995, pp. 1735-1740
Citations number
6
Categorie Soggetti
Physics, Applied
Journal title
Journal of applied physics → ACNP
ISSN journal
00218979
Volume
77
Issue
4
Year of publication
1995
Pages
1735 - 1740
Database
ISI
SICI code
0021-8979(1995)77:4<1735:PEAOEG>2.0.ZU;2-1