HIGH-ELECTRON-MOBILITY IN PSEUDOMORPHIC MODULATION-DOPED IN0.75GA0.25AS INALAS HETEROSTRUCTURES ACHIEVED WITH GROWTH INTERRUPTIONS/

Authors
DROUOT V GENDRY M SANTINELLI C VIKTOROVITCH P HOLLINGER G ELLEUCH S PELOUARD JL
Citation
V. Drouot et al., HIGH-ELECTRON-MOBILITY IN PSEUDOMORPHIC MODULATION-DOPED IN0.75GA0.25AS INALAS HETEROSTRUCTURES ACHIEVED WITH GROWTH INTERRUPTIONS/, Journal of applied physics, 77(4), 1995, pp. 1810-1812
Citations number
19
Categorie Soggetti
Physics, Applied
Journal title
Journal of applied physics → ACNP
ISSN journal
00218979
Volume
77
Issue
4
Year of publication
1995
Pages
1810 - 1812
Database
ISI
SICI code
0021-8979(1995)77:4<1810:HIPMI>2.0.ZU;2-Z