A NOVEL TECHNIQUE FOR DIAMOND FILM DEPOSITION USING SURFACE-WAVE DISCHARGES

Citation
Cfm. Borges et al., A NOVEL TECHNIQUE FOR DIAMOND FILM DEPOSITION USING SURFACE-WAVE DISCHARGES, DIAMOND AND RELATED MATERIALS, 4(2), 1995, pp. 149-154
Citations number
20
Categorie Soggetti
Material Science
ISSN journal
09259635
Volume
4
Issue
2
Year of publication
1995
Pages
149 - 154
Database
ISI
SICI code
0925-9635(1995)4:2<149:ANTFDF>2.0.ZU;2-F
Abstract
Surface-wave-sustained discharges are utilized in a non-conventional c onfiguration to yield plasma with a hemispherical shape for diamond fi lm deposition at gas pressures in the range 1-60 Torr. Compared with m icrowave-sustained plasma balls in ''bell jar'' reactors, microwave po wer absorption is more efficient: no power is left that would heat the substrate and, for given power to the reactor and gas conditions, hig her power densities are obtained in the plasma. The roughness of the d eposit decreases with increasing power density. Deposition rate on 4 c m(2) is typically 350 mu g cm(-2) h(-1).