Jz. Xiong et al., STRUCTURE AND BONDING OF ORGANOSILICON COMPOUNDS CONTAINING SILICON-SILICON AND SILICON-GERMANIUM BONDS - AN X-RAY-ABSORPTION FINE-STRUCTURE STUDY, Canadian journal of chemistry, 74(11), 1996, pp. 2229-2239
Si K-edge X-ray Absorption Fine Structures (XAFS) spectroscopy has bee
n used to study the structure and bonding of a series of highly symmet
ric organosilicon compounds, Si(CH3)(4), Ge[Si(CH3)(3)](4), Si[Ge(CH3)
(3)](4), and Si[Si(CH3)(3)](4), in the gas phase. It was found that th
ere is a significant difference in the absorption coefficient in the n
ear-edge region between local Si-Si interactions-in these compounds an
d long-range Si-Si interactions in crystalline solids and that the Si-
Si bond length in the molecule Si[Si(CH3)(3)](4) is 2.364(10) Angstrom
and the Si-Ge bond lengths in Si[Ge(CH3)(3)](4) and Ge[Si(CH3)(3)](4)
are 2.38(3)Angstrom and 2.396(15) Angstrom, respectively. These resul
ts and their comparison to Si-Si and Si-Ge interatomic distances in cr
ystalline solids are discussed.