STRUCTURE AND BONDING OF ORGANOSILICON COMPOUNDS CONTAINING SILICON-SILICON AND SILICON-GERMANIUM BONDS - AN X-RAY-ABSORPTION FINE-STRUCTURE STUDY

Citation
Jz. Xiong et al., STRUCTURE AND BONDING OF ORGANOSILICON COMPOUNDS CONTAINING SILICON-SILICON AND SILICON-GERMANIUM BONDS - AN X-RAY-ABSORPTION FINE-STRUCTURE STUDY, Canadian journal of chemistry, 74(11), 1996, pp. 2229-2239
Citations number
32
Categorie Soggetti
Chemistry
ISSN journal
00084042
Volume
74
Issue
11
Year of publication
1996
Pages
2229 - 2239
Database
ISI
SICI code
0008-4042(1996)74:11<2229:SABOOC>2.0.ZU;2-1
Abstract
Si K-edge X-ray Absorption Fine Structures (XAFS) spectroscopy has bee n used to study the structure and bonding of a series of highly symmet ric organosilicon compounds, Si(CH3)(4), Ge[Si(CH3)(3)](4), Si[Ge(CH3) (3)](4), and Si[Si(CH3)(3)](4), in the gas phase. It was found that th ere is a significant difference in the absorption coefficient in the n ear-edge region between local Si-Si interactions-in these compounds an d long-range Si-Si interactions in crystalline solids and that the Si- Si bond length in the molecule Si[Si(CH3)(3)](4) is 2.364(10) Angstrom and the Si-Ge bond lengths in Si[Ge(CH3)(3)](4) and Ge[Si(CH3)(3)](4) are 2.38(3)Angstrom and 2.396(15) Angstrom, respectively. These resul ts and their comparison to Si-Si and Si-Ge interatomic distances in cr ystalline solids are discussed.