MICROSTRUCTURAL DEVELOPMENT DURING DIFFUSION BONDING OF ALPHA-SILICONCARBIDE TO MOLYBDENUM

Authors
MARTINELLI AE DREW RAL
Citation
Ae. Martinelli et Ral. Drew, MICROSTRUCTURAL DEVELOPMENT DURING DIFFUSION BONDING OF ALPHA-SILICONCARBIDE TO MOLYBDENUM, Materials science & engineering. A, Structural materials: properties, microstructure and processing, 191(1-2), 1995, pp. 239-247
Citations number
13
Categorie Soggetti
Material Science
Journal title
Materials science & engineering. A, Structural materials: properties, microstructure and processing → ACNP
ISSN journal
09215093
Volume
191
Issue
1-2
Year of publication
1995
Pages
239 - 247
Database
ISI
SICI code
0921-5093(1995)191:1-2<239:MDDDBO>2.0.ZU;2-Z
Abstract
Silicon carbide was joined to molybdenum by solid state bonding at tem peratures ranging from 1200 degrees C to 1700 degrees C. The interface s were characterized by scanning electron microscopy, electron probe m icroanalysis, and X-ray diffraction. Diffusion of Si and C into Mo res ulted in a reaction layer with two main phases: Mo5Si3 and Mo2C. For t emperatures higher than 1400 degrees C a ternary phase of composition Mo5Si3C was also formed, and at 1700 degrees C nucleation of MoC was o bserved.