MATERIALS ENGINEERING FOR OPTOELECTRONIC CRYSTALS RELATED TO III-V COMPOUNDS

An introductory glimpse of modern approaches to the application of pro ductive and reasonable techniques for the defined electronic materials will be presented. The paper is divided into four parts. Each is supp lemented with illustrations. The first part explains the meaning of ma terials engineering for electronics (MEE) and for optoelectronic cryst als in particular. its interdisciplinarity is shown and also the range of problems it can solve. Graduate courses of some MEE disciplines ar e also given. The second part of the paper related to the feasible sol ution with MEE as to the optimal realization of the application requir ements. The physical modelling, databases and characterization techniq ues are given. The third part deals with particular materials: III-V s emiconductors. A brief survey of the best methods of crystal growth is given, stressing those which imply a possibility of creating crystals defined up to the atomic range. The last part is devoted to our team' s original crystal growth methods: CAM-S (A Crystallization Method Pro viding Composition Autocontrol in Situ) and COM-S (Calculation Method of Optimal Molten-Solution Composition). The combination of these meth ods, further modified with vibrational and magneto-hydrodinamical stir ring (VS, MHD-S), allows us to grow crystalline ingots of ternary soli d solutions (TSS) possessing extreme homogeneity. Illustrations on In- Ga-Sb system are supplied. We conclude with a discussion of the impact of such methods and approaches on a device quality and to other field s.