NOVEL GROWTH METHODS OF OPTOELECTRONIC CRYSTALS BASED ON ANTIMONIDES

This work contributes to the growth of bulk crystals where crystals ar e grown from a molten-solution zone (MSZ). Our original modifications of THM have been used for a crystallization of GaSb and of (Ga.In)Sb - the ternary Solid Solution (TSS). The crystallization process has bee n accelerated with a low frequency and low energy vibrational stirring (VS). Lately, the stirring has been combined with the magneto-hydrody namical stirring (MHD-S) and applied on GaSb. The lattice parameter 'a ' of TSS crystals has been constant throughout the significant part of the ingot length. This approach has permitted the growth of these cry stalline ingots;with 'a' apriori chosen and calculated - having the de viation from its constancy less than 0.03% (0.2 pm) with a 75 mm lengt h. Crystals can have a mosaic structure at this stage.