DEPENDENCY OF METASTABLE DEFECT DENSITY ON ILLUMINATION TIME IN HYDROGENATED AMORPHOUS-SILICON

We measured the evolution of the subgap electronic defect density as a function of illumination time in hydrogenated amorphous silicon (a-Si :H)samples. The defect density profile was evaluated from the deconvol ution of the optical absorption coefficient measured in the sub-band-g ap energy region. The absorption coefficient was determined by the Con stant Photocurrent Method (CPM) technique. We found the growth of a pe ak associated with the neutral defects (D-0). We compare our results w ith the predictions of the model proposed by Stutzmann, Jackson, and T sai, [1] obtaining a satisfactory agreement.