AMORPHOUS-SILICON CARBIDE FILMS PREPARED BY PECVD UNDER HYDROGEN DILUTION AND HIGH-EXCITATION FREQUENCY

We have studied the influence of hydrogen dilution (0 to 60 % H-2 in t he reactant gas) and plasma excitation frequency (13.56 Mhz and 50 Mhz ) on amorphous silicon carbide films deposited by Plasma Enhanced Chem ical Vapor Deposition (PECVD). Boron doped samples were also deposited under similar conditions. The refractive index (n(r)) and the IR spec tra were used to evaluate the carbon content of the samples. We have o bserved that hydrogen dilution favors the incorporation of carbon in t he intrinsic films.