PHOTOVOLTAIC HG1-XCDXTE (MCT) DETECTORS FOR INFRARED RADIATION

Authors
AGUIRRE M CANEPA H HEREDIA E SERRAVALLE O DERECA NEW
Citation
M. Aguirre et al., PHOTOVOLTAIC HG1-XCDXTE (MCT) DETECTORS FOR INFRARED RADIATION, Anales de la Asociacion Quimica Argentina, 84(1), 1996, pp. 67-72
Citations number
9
Categorie Soggetti
Chemistry
Journal title
Anales de la Asociacion Quimica Argentina → ACNP
ISSN journal
03650375
Volume
84
Issue
1
Year of publication
1996
Pages
67 - 72
Database
ISI
SICI code
0365-0375(1996)84:1<67:PH(DFI>2.0.ZU;2-Q
Abstract
P-type Hg1-xCdxTe layers were growth at PRINSO (Programa de Investigac iones en Solidos) by ISOVPE (Isothermal Vapor Phase Epitaxy) technique . Argon implantation was carried our to create a junction. Backscatter ing Spectrometry, Channeling and electrical measurements were performe d before and after implantation. Diodes were manufactured and their ph otovoltaic properties were evaluated by measuring I-V characteristics and the spectral response at 77 K.