THE EFFECT OF IMPLANTATION CONDITIONS AND ACTIVATE ANNEALING ON THE STRUCTURE OF SILICON-DOPED AND SELENIUM-DOPED GALLIUM-ARSENIDE PLATES

Authors
BUBLIK VT EVGENEV SB KALININ AA MILVIDSKII MG
Citation
Vt. Bublik et al., THE EFFECT OF IMPLANTATION CONDITIONS AND ACTIVATE ANNEALING ON THE STRUCTURE OF SILICON-DOPED AND SELENIUM-DOPED GALLIUM-ARSENIDE PLATES, Kristallografia, 40(1), 1995, pp. 128-136
Citations number
11
Categorie Soggetti
Crystallography
Journal title
Kristallografia → ACNP
ISSN journal
00234761
Volume
40
Issue
1
Year of publication
1995
Pages
128 - 136
Database
ISI
SICI code
0023-4761(1995)40:1<128:TEOICA>2.0.ZU;2-4