CHARGING AND DISCHARGING CHARACTERISTICS OF MCHDS STRUCTURES

The photocharging characteristics and isothermal depolarization of cha rge in metal-chalcogenide glass semiconductor-dielectric-semiconductor (MChDS) structures have been studied. Photocharging is explained by t he change in the trap population in the chalcogenide glass semiconduct or (ChGS). It has been found that dark discharging is due to thermofie ld emission of holes from traps according to the Poole-Frenkel law. Th e energy distribution of the filled traps is quasicontinuous with an a symmetrical maximum in the energy held of 0.70-0.90 eV for As2Se3 and 0.85-1.05 eV for As2S3. Parameters in the writing and read-out regimes demonstrate the MChDS structure as an image device.