Tetraethoxysilane (TEOS) is one of the most often used sources for the
low pressure chemical vapor deposition (LPCVD) of silicon dioxide fil
ms in the electronics industry because it can yield conformal films ev
en for highly corrugated substrates. Our previous studies have shown t
hat ethanol can model, to a large extent, the adsorption and thermal d
ecomposition of TEOS on both Si(100) and porous SiO2 surfaces. In part
icular, on the Si(100) surface, after the initial reactive adsorption
of either precursor gas, the subsequent thermal decomposition in vacuu
m of both systems primarily leads to the desorption of ethylene, hydro
gen, acetylene, and acetaldehyde. Using temperature programmed desorpt
ion mass spectrometry (TPD), we have studied the effects of preadsorbe
d H on the CH3CD2OH adsorption and decomposition on Si(100). Two major
effects are observed in this coadsorption system. Firstly, the ethano
l reactive adsorption level is perturbed by the preadsorption level of
atomic hydrogen. Secondly, the relative yields among various desorpti
on channels are altered. Specifically, at increasing level of H-preads
orption, the production of acetylene and hydrogen is suppressed; while
the production of acetaldehyde is enhanced.