DEFECT LEVEL OF PROTON-IRRADIATED SILICON WITH DOSES RANGING FROM 1X10(12) CM(-2) TO 1X10(13) CM(-2)

Schottky diodes of n-type silicon have been irradiated by 800 keV and 1 MeV protons at doses ranging from 1 x 10(12) cm-2 to 1 x 10(13) cm-2 . Thermally Stimulated Capacitance (TSCAP), capacitance-voltage (C-V) and Deep Level Transient Spectroscopy (DLTS) have been applied for sam ple analysis. By TSCAP measurements a strong compensation effect has b een observed for irradiation doses up to 5 x 10(12) cm-2. At least fiv e deep levels have been observed in the DLTS spectra, but the E(200) t rap, located at E(c) - 0.36 eV, was only revealed by the fitting proce dure. An additional new pure damage level, labelled E(110), with an en ergy of E(c) - 0.19 eV and a capture cross section of about 5 x 10(-16 ) cm2 has been also observed in the highly damaged region. The variati ons of the DLTS signal with pulse amplitude of the E(c) - 0.3 eV level , called E(170), has been found to be different of what is obtained at low dose irradiations: a dip followed by a peak in concentration near the maximum of implanted ions is suggested. A possible explanation of such behavior is discussed. We also report the possibility of an over doping effect near the proton distribution before thermal annealing.