CRYSTALLIZATION PROCESS ON AMORPHOUS MG-GA-SN SYSTEM

Citation
M. Fontana et B. Arcondo, CRYSTALLIZATION PROCESS ON AMORPHOUS MG-GA-SN SYSTEM, Journal of Materials Science, 30(3), 1995, pp. 734-736
Citations number
14
Categorie Soggetti
Material Science
ISSN journal
00222461
Volume
30
Issue
3
Year of publication
1995
Pages
734 - 736
Database
ISI
SICI code
0022-2461(1995)30:3<734:CPOAMS>2.0.ZU;2-U
Abstract
The crystallization processes on Mg81.09Ga18.91 and Mg80.50Ga17.76Sn1. 67 amorphous samples were studied by means of X-ray diffraction and el ectrical resistivity isothermal measurements. A small amount of Sn add ed to the binary eutectic was found to modify the crystallization prod ucts and the evolution time. Crystallization activation energies were estimated.