The crystallization processes on Mg81.09Ga18.91 and Mg80.50Ga17.76Sn1.
67 amorphous samples were studied by means of X-ray diffraction and el
ectrical resistivity isothermal measurements. A small amount of Sn add
ed to the binary eutectic was found to modify the crystallization prod
ucts and the evolution time. Crystallization activation energies were
estimated.