Chemical vapor deposition at high temperatures provided the deposited
atoms with the necessary surface mobility to ensure crystallinity and
epitaxial growth. The use of high-temperature CVD in the deposition of
high-T-c superconducting ceramics and covalent materials such as diam
ond (see Figure) and boron nitride is reviewed, and, for example, the
methods used to maintain the tetrahedral arrangement of neighboring at
oms during deposition discussed.