Ultrathin active layers with quantum well (QW) depth and/or width modu
lation in one or two lateral directions are considered. It is shown th
at modulation leads to a modification in the density of state (DOS) di
stribution and, hence is involved in working optical transitions. Such
features of corrugated QW (CQW) can be suitable in laser structures f
or reducing the threshold carrier concentration, increasing the T0 par
ameter and stabilising the operation wavelength compared to ordinary q
uantum well structures. An advantage of these profiled QWs is the oppo
rtunity to use suitable properties of 1D and 0D objects without actual
ly making these microstructures, but only profiling the planar QW.