8-GBIT S GAAS-ON-INP 1.3-MU-M WAVELENGTH OEIC TRANSMITTER/

Authors
CALLIGER O CLEI A ROBEIN D AZOULAY R PIERRE B BIBLEMONT S KAZMIERSKI C
Citation
O. Calliger et al., 8-GBIT S GAAS-ON-INP 1.3-MU-M WAVELENGTH OEIC TRANSMITTER/, IEE proceedings. Optoelectronics, 142(1), 1995, pp. 13-16
Citations number
7
Categorie Soggetti
Engineering, Eletrical & Electronic",Optics,Telecommunications
Journal title
IEE proceedings. Optoelectronics → ACNP
ISSN journal
13502433
Volume
142
Issue
1
Year of publication
1995
Pages
13 - 16
Database
ISI
SICI code
1350-2433(1995)142:1<13:8SG1WO>2.0.ZU;2-V
Abstract
Using GaAs-on-InP heteroepitaxial technology, a 1.3 mum OEIC transmitt er combining a BRS laser with two GaAs metal-semiconductor field-effec t-transistors has been fabricated. The device design, fabrication proc essing and performance are described. 8 Gbit/s NRZ direct modulation i s demonstrated. This is the highest bit rate ever reported for GaInAsP laser GaAs-on-InP transistor circuits.