INFLUENCE OF DX CENTERS IN THE ALXGA1-XAS BARRIER ON THE LOW-TEMPERATURE DENSITY AND MOBILITY OF THE 2-DIMENSIONAL ELECTRON-GAS IN GAAS ALGAAS MODULATION-DOPED HETEROSTRUCTURE/

Authors
YANG B WANG ZG CHENG YH LIANG JB LIN LY ZHU ZP XU B LI W
Citation
B. Yang et al., INFLUENCE OF DX CENTERS IN THE ALXGA1-XAS BARRIER ON THE LOW-TEMPERATURE DENSITY AND MOBILITY OF THE 2-DIMENSIONAL ELECTRON-GAS IN GAAS ALGAAS MODULATION-DOPED HETEROSTRUCTURE/, Applied physics letters, 66(11), 1995, pp. 1406-1408
Citations number
16
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
66
Issue
11
Year of publication
1995
Pages
1406 - 1408
Database
ISI
SICI code
0003-6951(1995)66:11<1406:IODCIT>2.0.ZU;2-7