Transport phenomena in a double-bend quantum structure fabricated in t
he two-dimensional electron gas of a modulation doped GaAs/AlGaAs stru
cture, are studied experimentally. The structure consists of an electr
ostatically defined quantum dot with two one-dimensional wires connect
ed on opposite corners of the dot. The current-voltage characteristics
of such devices exhibit quantized conductance breakdown (non-linear b
ehavior), conductance variation with confinement, and non-linear and a
symmetric behavior at high bias condition. Low temperature conductance
of this structure shows evidence of resonant tunneling, while the pea
ks of the conductance vary with temperature. (C) 1996 Academic Press L
imited