CONDUCTANCE STUDIES IN A DOUBLE-BEND QUANTUM STRUCTURE

Citation
M. Hannan et al., CONDUCTANCE STUDIES IN A DOUBLE-BEND QUANTUM STRUCTURE, Superlattices and microstructures, 20(4), 1996, pp. 427-433
Citations number
13
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
07496036
Volume
20
Issue
4
Year of publication
1996
Pages
427 - 433
Database
ISI
SICI code
0749-6036(1996)20:4<427:CSIADQ>2.0.ZU;2-X
Abstract
Transport phenomena in a double-bend quantum structure fabricated in t he two-dimensional electron gas of a modulation doped GaAs/AlGaAs stru cture, are studied experimentally. The structure consists of an electr ostatically defined quantum dot with two one-dimensional wires connect ed on opposite corners of the dot. The current-voltage characteristics of such devices exhibit quantized conductance breakdown (non-linear b ehavior), conductance variation with confinement, and non-linear and a symmetric behavior at high bias condition. Low temperature conductance of this structure shows evidence of resonant tunneling, while the pea ks of the conductance vary with temperature. (C) 1996 Academic Press L imited