The high-temperature resisitivity of K and Rb-doped C-60 single crysta
ls was measured with pulsed heating techniques and analyzed within the
parallel-resistor extension to Bloch-Boltzmann transport theory. Rb3C
60 exhibits resitivity saturation with p(sat)(Rb) approximate to 6 +/-
3m Omega-cm, corresponding to a saturation mean free path of l(sat)(R
b) approximate to 1 +/- 0.5 Angstrom. In contrast K3C60 does not show
signs of resistivity saturation up to 800 K, suggesting that p(sat)(K)
> 3m Omega-cm and l(sat)(K) < 1.5 Angstrom. The electronic stakes at
high temperature have a characteristic length scale significantly smal
ler than the fcc lattice constant.