RESISTIVITY SATURATION IN ALKALI-DOPED C-60

Citation
Jg. Hou et al., RESISTIVITY SATURATION IN ALKALI-DOPED C-60, Solid state communications, 93(12), 1995, pp. 973-977
Citations number
29
Categorie Soggetti
Physics, Condensed Matter
Journal title
ISSN journal
00381098
Volume
93
Issue
12
Year of publication
1995
Pages
973 - 977
Database
ISI
SICI code
0038-1098(1995)93:12<973:RSIAC>2.0.ZU;2-P
Abstract
The high-temperature resisitivity of K and Rb-doped C-60 single crysta ls was measured with pulsed heating techniques and analyzed within the parallel-resistor extension to Bloch-Boltzmann transport theory. Rb3C 60 exhibits resitivity saturation with p(sat)(Rb) approximate to 6 +/- 3m Omega-cm, corresponding to a saturation mean free path of l(sat)(R b) approximate to 1 +/- 0.5 Angstrom. In contrast K3C60 does not show signs of resistivity saturation up to 800 K, suggesting that p(sat)(K) > 3m Omega-cm and l(sat)(K) < 1.5 Angstrom. The electronic stakes at high temperature have a characteristic length scale significantly smal ler than the fcc lattice constant.