A LOW-RESISTANCE LAYER ON LINBO3 PRODUCED IN HYDROGEN RF DISCHARGE

Citation
H. Turcicova et al., A LOW-RESISTANCE LAYER ON LINBO3 PRODUCED IN HYDROGEN RF DISCHARGE, Solid state communications, 93(12), 1995, pp. 979-981
Citations number
14
Categorie Soggetti
Physics, Condensed Matter
Journal title
ISSN journal
00381098
Volume
93
Issue
12
Year of publication
1995
Pages
979 - 981
Database
ISI
SICI code
0038-1098(1995)93:12<979:ALLOLP>2.0.ZU;2-G
Abstract
LiNbO3 slices were chemically reduced in radio-frequency hydrogen plas ma for 20-80 minutes. The H-2 pressure was about 0.5 Torr at a flow ra te of 8 sccm. The samples turned black after plasma treatment. The deg ree of bulk reduction was investigated via electric resistance measure ments. A resistance gradient reflecting the reduction degree under the sample surface exists. A low-resistance surface layer appeared on the sample after treatement in RF plasma at low H-2 pressure (<1 Torr). T he layer resistivity decreases with the electric current increase. Res istivity of 2,6 m Omega cm was measured.