ALGAINAS INP 1.5 MU-M MQW DFB LASER-DIODES EXCEEDING 20 GHZ BANDWIDTH/

Authors
STEINHAGEN F HILLMER H LOSCH R SCHLAPP W WALTER H GOBEL R KUPHAL E HARTNAGEL HL BURKHARD H
Citation
F. Steinhagen et al., ALGAINAS INP 1.5 MU-M MQW DFB LASER-DIODES EXCEEDING 20 GHZ BANDWIDTH/, Electronics Letters, 31(4), 1995, pp. 274-275
Citations number
5
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
31
Issue
4
Year of publication
1995
Pages
274 - 275
Database
ISI
SICI code
0013-5194(1995)31:4<274:AI1MMD>2.0.ZU;2-J
Abstract
Buried mushroom multiquantum well DFB laser diodes with compressively strained GaInAs quantum wells and asymmetric confinement layer design are fabricated with a combined MBE/MOCVD technology. Packaged devices exhibit high -3 dB IM bandwidths for very low bias levels and a record bandwidth for this material system of 21 GHz.