DEMONSTRATION OF 3.5 MU-M GA1-XINXSB INAS SUPERLATTICE DIODE-LASER/

Authors
HASENBERG TC CHOW DH KOST AR MILES RH WEST L
Citation
Tc. Hasenberg et al., DEMONSTRATION OF 3.5 MU-M GA1-XINXSB INAS SUPERLATTICE DIODE-LASER/, Electronics Letters, 31(4), 1995, pp. 275-276
Citations number
16
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
31
Issue
4
Year of publication
1995
Pages
275 - 276
Database
ISI
SICI code
0013-5194(1995)31:4<275:DO3MGI>2.0.ZU;2-N
Abstract
A demonstration of a semiconductor diode laser based on a type-II Ga1- xInxSb/InAs superlattice active layer is reported. The laser structure uses InAs/AlSb superlattice cladding layers and a multiquantum well a ctive layer with GaInAsSb barriers and Ga1-xInxSb/InAs-superlattice we lls. An emission wavelength of 3.47 mu m for pulsed operation up to 16 0 K is observed.