PARAMETRIC STUDY OF CAVITY LENGTH AND MIRROR REFLECTIVITY IN ULTRALOWTHRESHOLD QUANTUM-WELL INGAAS ALGAAS LASERS/

Authors
CHEN TR ZHAO B ENG L FENG J ZHUANG YH YARIV A
Citation
Tr. Chen et al., PARAMETRIC STUDY OF CAVITY LENGTH AND MIRROR REFLECTIVITY IN ULTRALOWTHRESHOLD QUANTUM-WELL INGAAS ALGAAS LASERS/, Electronics Letters, 31(4), 1995, pp. 285-287
Citations number
7
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
31
Issue
4
Year of publication
1995
Pages
285 - 287
Database
ISI
SICI code
0013-5194(1995)31:4<285:PSOCLA>2.0.ZU;2-O
Abstract
Record low CW threshold currents of 16 mu A at-room temperature and 21 mu A at cryogenic temperature have been demonstrated in buried hetero structure strained layer, single quantum well InGaAs/AlGaAs lasers wit h a short cavity length and high reflectivity coatings.