DIRECT MEASUREMENT OF DOPING DENSITY AND BARRIER LOWERING EFFECT WITHBIAS IN QUANTUM-WELLS

Authors
XU Y SHAKOURI A YARIV A KRABACH T DEJEWSKI S
Citation
Y. Xu et al., DIRECT MEASUREMENT OF DOPING DENSITY AND BARRIER LOWERING EFFECT WITHBIAS IN QUANTUM-WELLS, Electronics Letters, 31(4), 1995, pp. 320-321
Citations number
5
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
31
Issue
4
Year of publication
1995
Pages
320 - 321
Database
ISI
SICI code
0013-5194(1995)31:4<320:DMODDA>2.0.ZU;2-7
Abstract
An experimental method for determining the doping density in thin-shee t semiconductor material such as quantum wells (QWs) is demonstrated i n GaAs/AlGaAs multiquantum-well infra-red photodetectors. The results agree very well with the conventional Hall measurement method. Barrier lowering effect with bias in QWs is determined experimentally.