Floating body effects are investigated in thin-film SOI MOSFETs. it is
shown that a moderate kink effect can be obtained for fully depleted
SOT devices with intermediate Si layer thicknesses. This moderate kink
is due to the significant potential barrier height of the source/thin
film diode, which can be modulated by the additional forward bias ind
uced by the impact ionisation current, for these moderately fully depl
eted devices. Various substrate and body biases are applied in order t
o analyse the transition from partial depletion to strong full depleti
on regimes.