ZEEMAN SPLITTING OF SINGLE SEMICONDUCTOR IMPURITIES IN RESONANT-TUNNELING HETEROSTRUCTURES

Authors
DESHPANDE MR SLEIGHT JW REED MA WHEELER RG MATYI RJ
Citation
Mr. Deshpande et al., ZEEMAN SPLITTING OF SINGLE SEMICONDUCTOR IMPURITIES IN RESONANT-TUNNELING HETEROSTRUCTURES, Superlattices and microstructures, 20(4), 1996, pp. 513-522
Citations number
19
Categorie Soggetti
Physics, Condensed Matter
Journal title
Superlattices and microstructures → ACNP
ISSN journal
07496036
Volume
20
Issue
4
Year of publication
1996
Pages
513 - 522
Database
ISI
SICI code
0749-6036(1996)20:4<513:ZSOSSI>2.0.ZU;2-2
Abstract
Zeeman splitting of the ground state of single impurities in the quant um wells of resonant tunneling heterostructures is reported. We determ ine the absolute magnitude of the effective magnetic spin splitting fa ctor g(perpendicular to) for a single impurity in a 44 Angstrom Al0.2 7Ga0.73As/GaAs/Al0.27Ga0.73As quantum well to be 0.28 +/- 0.02. This s ystem also allows for independent measurement of the electron tunnelin g rates through the two potential barriers and estimation of the occup ation probability of the impurity state in the quantum well. (C) 1996 Academic Press Limited