A NEW-TYPE OF P-DOPING FOR POLYACETYLENE

We report here a new type of p-doping for polyacetylene which seems to be very promising. The new dopant is the (CF3SO2N- ion. It is possibl e to form salts with various counter-ions and to perform electrochemic al or chemical doping. With electrochemical doping we reached a maximu m doping level close to 8% and the conductivity increased up to 18 S/c m. We performed Raman measurements with various wavelengths and observ ed the characteristic peaks of cis and trans polyacetylene simultaneou sly. This behaviour can be interpreted as the result of an inhomogenou s and weak doping of the sample. We observed also photoluminescence in these doped samples. We present also the dependence of the EPR linewi dth as a function of the chemical doping time.