LOW-TEMPERATURE MAGNETORESISTANCE IN FULLY-DOPED POLYACETYLENE WITH DISORDER

Authors
KANEKO H ISHIGURO T TSUKAMOTO J TAKAHASHI A
Citation
H. Kaneko et al., LOW-TEMPERATURE MAGNETORESISTANCE IN FULLY-DOPED POLYACETYLENE WITH DISORDER, Synthetic metals, 69(1-3), 1995, pp. 31-32
Citations number
9
Categorie Soggetti
Physics, Condensed Matter","Metallurgy & Metallurigical Engineering
Journal title
Synthetic metals → ACNP
ISSN journal
03796779
Volume
69
Issue
1-3
Year of publication
1995
Pages
31 - 32
Database
ISI
SICI code
0379-6779(1995)69:1-3<31:LMIFPW>2.0.ZU;2-7
Abstract
From the analysis of magnetoresistance for the aged I-2-doped or FeCl3 -doped polyacetylenes where the carriers are localized, the difference between mobility edge and Fermi energy and effective Coulomb energy a re evaluated.