HALL-EFFECT IN CLO4- DOPED POLYTHIOPHENE AND POLY(3-METHYLTHIOPHENE)

Authors
FUKUHARA T MASUBUCHI S KAZAMA S
Citation
T. Fukuhara et al., HALL-EFFECT IN CLO4- DOPED POLYTHIOPHENE AND POLY(3-METHYLTHIOPHENE), Synthetic metals, 69(1-3), 1995, pp. 359-360
Citations number
8
Categorie Soggetti
Physics, Condensed Matter","Metallurgy & Metallurigical Engineering
Journal title
Synthetic metals → ACNP
ISSN journal
03796779
Volume
69
Issue
1-3
Year of publication
1995
Pages
359 - 360
Database
ISI
SICI code
0379-6779(1995)69:1-3<359:HICDPA>2.0.ZU;2-G
Abstract
We have studied the temperature dependence of the Hall effect and the resistivity for ClO4- (as-grown) doped poly thiophene and poly(3-methy lthiophene) films. For both samples, the sign of Hall coefficient is p ositive between 4.2K and 300K, consistent with the acceptor doping.