EPOXY BOND AND STOP-ETCH (EBASE) TECHNIQUE ENABLING BACKSIDE PROCESSING OF (AL)GAAS HETEROSTRUCTURES

The epoxy bond and stop-etch (EBASE) technique enables both the fronts ide and the backside processing of very thin (similar to 3000 Angstrom ) GaAs/AlGaAs epitaxial layer structures. Using this technique, a conv entionally processed epitaxial layer structure is inverted and epoxied to a new host substrate. The original substrate is removed leaving on ly the original epitaxial structure expoxied to the host substrate. Th e exposed backside of the epitaxial structure may then be processed. B ecause the structures fabricated using this technique are so thin, mes as, Schottky gates, and ohmic contacts may be defined in close proximi ty both above and below the active device layers. (C) 1996 Academic Pr ess Limited