A model for in-plane-gated structures is proposed, taking into account
surface currents and surface charges. The lateral band structures and
barrier heights are calculated self-consistently for different bias v
oltages utilizing this new model. Accumulated negative surface charges
lead to a strongly increased depletion length at the positively biase
d side of the lateral barriers. Most of the applied bias drops in this
depleted region and does not affect the barrier height. We have found
good agreement between these theoretical results and experimentally d
etermined barrier heights and depletion lengths obtained from temperat
ure-dependent current measurements and optical-beam-induced current me
asurements. (C) 1996 Academic Press Limited