DRY-ETCHING TECHNIQUE FOR SUBQUARTER-MICRON COPPER INTERCONNECTS

A dry etching technique for subquarter-micron Cu interconnects has bee n developed. A self-aligned passivation film on sidewalls of Cu lines is formed during etching. The thickness of the sidewall film composed of SiON can be controlled precisely by the composition of the etching gas mixture. The addition of NH3 to the etching gas mixture of SiCl4/C l-2/N-2, results in a sidewall film free of chlorine. Therefore, the s idewall film acts to protect Cu from oxidation and corrosion, and sust ains the multilayered structure without film peeling during the fabric ation process.