ENHANCED CHEMICAL-VAPOR-DEPOSITION OF COPPER FROM (HFAC)CU(TMVS) USING LIQUID COINJECTION OF TMVS

A direct liquid coinjection system has been applied to the chemical va por deposition of copper using the commercially available Cu(I)precurs or (hfac)Cu(TMVS), where hfac = 1,1,1,5,5,5-hexafluoroacetylacetonate and TMVS = trimethylvinylsilane. Precursor delivery was enhanced throu gh the use of a coinjection system wherein additional TMVS was mixed w ith the copper precursor before injection into the vaporization chambe r. The results reported here demonstrate the capability of depositing blanket copper of high purity (on the order of 99.99% copper) and low resistivity (1.85 +/- 0.1 mu Omega-cm). These copper films have been d eposited at rates up to and exceeding 1500 Angstrom/min. The effects o f temperature and carrier gas on deposition rate and resistivity are e xamined, The as-deposited films demonstrate a dependence of grain size with thickness and little structural or morphological change with ann ealing. This study suggests that liquid coinjection is an effective me thod for enhancing deposition rates and for producing high quality cop per films from copper(I) precursors.