CHARGE TRAPPING AND INTERFACE STATE GENERATION IN RAPID THERMAL PROCESSED OXIDE AND NITRIDED-OXIDE MOS CAPACITORS BY ELECTRON PHOTOINJECTION FROM AL GATE AND SI SUBSTRATE

Charge trapping and interface state generation in rapid thermal proces sed (RTP) oxide and NH3-nitrided oxide metal oxide semiconductor capac itors have been investigated by internal photoemission (IPE) electron injection from both the Al gate and the Si substrate. It is found that the generation rate of the interface state (D-it) by IPE electron pho toinjection from the Si substrate is one order of magnitude higher tha n that from the Al gate for both RTP oxide and nitrided oxide samples at low electron injection fluence, N-inj < 1 x 10(16) electron/cm(2). The polarity dependence of interface state generation is discussed by means of the hydrogen species induced D-it generation model. Photocurr ent voltage (photo-IV) technique has been used to determine the centro id and density of trapped charge after IPE electron photoinjection int o the dielectrics from both electrodes.