PHOTOELECTROCHEMICAL DIFFUSION LENGTH MEASUREMENTS ON P-TYPE MULTICRYSTALLINE SILICON FOR PHOTOVOLTAIC APPLICATIONS

Authors
BASTIDE S VEDEL J LINCOT D LE QN SARTI D
Citation
S. Bastide et al., PHOTOELECTROCHEMICAL DIFFUSION LENGTH MEASUREMENTS ON P-TYPE MULTICRYSTALLINE SILICON FOR PHOTOVOLTAIC APPLICATIONS, Journal of the Electrochemical Society, 142(3), 1995, pp. 1024-1030
Citations number
19
Categorie Soggetti
Electrochemistry
Journal title
Journal of the Electrochemical Society → ACNP
ISSN journal
00134651
Volume
142
Issue
3
Year of publication
1995
Pages
1024 - 1030
Database
ISI
SICI code
0013-4651(1995)142:3<1024:PDLMOP>2.0.ZU;2-D
Abstract
We report photoelectrochemical measurements of diffusion lengths in p- type multicrystalline silicon used for photovoltaic solar cells. We sh ow that, under some conditions, this method provides a very practical means for rendering an account of the quality nature of this material through diffusion length variations. The results obtained during two y ears of use of this method in the industrial processing of photovoltai c cells are presented and discussed.