C-60 FILMS ON SURFACE-TREATED SILICON - RECIPES FOR AMORPHOUS AND CRYSTALLINE GROWTH

C-60 films up to 1000 Angstrom in thickness have been grown by room-te mperature sublimation onto Si(100) and Si(111) substrates that have be en prepared with surfaces passivated against dangling bonds. X-ray dif fraction measurements reveal that films deposited on such substrates h ave a high degree of (111)-textured crystallinity which is absent in f ilms deposited on untreated Si. Examination of surface topographies wi th tapping mode atomic force microscopy shows a thickness-dependent in crease in roughness which is greater for the treated samples. Our resu lts are placed in context with respect to what is presently known abou t the growth of C-60 films on a variety of substrates. Implications fo r possible device applications will also be discussed.